Applied Physics, Vol. 3, Issue 4, Dec  2020, Pages 59-67; DOI: https://doi.org/10.31058/j.ap.2020.34005 https://doi.org/10.31058/j.ap.2020.34005

Fabrication of Al Electrodes on Si Substrate with Good Ohmic Contact

Applied Physics, Vol. 3, Issue 4, Dec  2020, Pages 59-67.

DOI: https://doi.org/10.31058/j.ap.2020.34005

Kyaw Swar Thu Rein 1 , Wai Mar Thet 1 , Pa Pa Aye 1 , Khine Thandar Nyunt Swe 1 , Khaing Zin Nway 2 , Hla Myo Tun 1*

1 Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

2 Department of Electronic Engineering, Technological University (Myeik), Myeik, Myanmar

Received: 1 August 2020; Accepted: 20 September 2020; Published: 5 October 2020

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Abstract

The paper mainly focuses on the fabrication of Al electrodes on Si substrate with good ohmic contact based on the experimental studies. The main aim is to fabricate Al electrodes on the Si substrate. The objectives are as to know how to deposit Al by using thermal evaporation method, to learn the concept of native oxide on Si substrate and to test the conductivity and resistivity of two kinds of specimens. The experimental studies are completed in the semiconductor laboratory. The deposition of metal on semiconductor was successfully accomplished to observe the good ohmic contact for fabrication process of semiconductor crystal growth. The results confirm that the developed electrodes have met the high performance applications for metal/semiconductor stripe structure for future power electronic devices.

Keywords

Fabrication, Nonostructure, Semiconductor Materials, Measurement, Thin Film

Copyright

© 2017 by the authors. Licensee International Technology and Science Press Limited. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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