Energy Research, Vol. 4, Issue 3, Sep  2020, Pages 21-33; DOI: https://doi.org/10.31058/j.er.2020.43002 https://doi.org/10.31058/j.er.2020.43002

Effect of Annealing Temperature on Optical and Structural Properties of EDTA Mediated Solution Grown Zinc Selenide Thin Films

Energy Research, Vol. 4, Issue 3, Sep  2020, Pages 21-33.

DOI: https://doi.org/10.31058/j.er.2020.43002

Egwunyenga Nkechi Josephine 1 , Okoli Nonso Livinus 2* , Nwankwo Ikechukwu Ernest 3 , Obimma Ifeanyichukwu Onyebuchi 3

1 Department of Science Laboratory Technology, Delta State polytechnic, Ozoro, Nigeria

2 Department of Physics, Legacy University, Okija, Nigeria

3 Department of Science Laboratory Technology, Federal Polytechnic Oko, Oko, Nigeria

Received: 1 April 2020; Accepted: 14 June 2020; Published: 8 September 2020

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Abstract

This work reports successful deposition of Zinc Selenide thin films on microscopic glass substrates of dimension (25.4 mm x 76.2 mm x 1.2 mm) using solution growth method in alkaline medium in the presence of EDTA as complexing agent. The bath composed of molar solution of zinc acetate (Zn(CH3CO2)2·2H2O) as source of Zn2+ ion, freshly refluxed sodium selenosulphate as source of Se2+ ion and ammonium hydroxide as pH adjuster. Five samples of ZnSe thin films were fabricated at room temperature (300 K). The four of the deposited samples were heat – treated in an electric oven at temperatures of 373 K, 473 K, 573 K and 673 K respectively. Film thickness obtained by gravimetric method ranged from 435.15 nm to 744.05 nm. Film thickness was found to increase as annealing temperature increases. Optical properties measured with Spectrophotometer showed that the absorbance is high within UV region but decreases as wavelength increases. Transmittance of the films are found to be low within UV region but increases as wavelength increase. Reflectance of the films is low which suggest the usefulness of the deposited film in antireflective coating. Absorbance was found to increase as temperature increases while transmittance to decreases as temperature increases. The energy band gap result obtained ranged between 2.42 eV – 2.94 eV. We observed that the energy band gap decrease as annealing temperature increase. Refractive index ranged between 1.14 and 2.60. The optical results obtained show that ZnSe thin films could be used for solar energy application and optoelectronics devices. Average crystallite sizes obtained using Scherrer’s formula are between 7.44 nm and 8.05 nm.

Keywords

Solution Growth Method, Zinc Selenide, Annealing Temperature, Optical Properties, Structural Properties

Copyright

© 2017 by the authors. Licensee International Technology and Science Press Limited. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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