Advancements in Materials, Vol. 2, Issue 1, Feb  2018, Pages 17-28; DOI: 10.31058/ 10.31058/

Absorption Coefficient of Bi22.5Se0.5 Structures Applicable to the Creation of Photoelectric Converters

Advancements in Materials, Vol. 2, Issue 1, Feb  2018, Pages 17-28.

DOI: 10.31058/

Nuru Safarov 1* , Sevinc Orucova 2 , Gurban Ahmadov 3 , Shahla Ahmadova 3

1 Department of Electronics and Telecommunications Engineering, Khazar University, Baku, Azerbaijan

2 Azerbaijan Medical University, Baku, Azerbaijan

3 Institute of Physics of Azerbaijan Nas, Baku, Azerbaijan

Received: 12 December 2017; Accepted: 8 January 2018; Published: 14 February 2018

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The dependences of the light absorption coefficient in the film structures Bi22.5Se0.5 on the photon energy have been experimentally studied. It is shown that the profiles of the distribution of selenium atoms over the thickness of the surface layer of unannealed and depleted thin Bi22.5Se0.5 films. It is also shown that the release of selenium during heat treatment is due to the relatively high vapor pressure of selenium in a three-component semiconductor compound. As a result of work are received Si -Bi2Те3-хSeх heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that the structures Bi22.5Se0.5 received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.


Thin-Film Material, Semiconductor, Optical Properties, Crystal, Absorption Coefficient, Concentration


© 2017 by the authors. Licensee International Technology and Science Press Limited. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


[1] Gurban Axmedov. Methods for Determination of the Optical Constants of the Substance BiTe-BiSe, American Journal of Physics and Applications. Vol. 2, No. 6, 2014, pp. 150-155. doi: 10.11648/j.ajpa.20140206.16.

[2] Werner, J.H., Mattheis, J., and Rau, U. (2005) Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2. Thin Solid Films, 480/481, 399–409.

[3] MusaverMusayev, SedreddinAxmedov, GurbanAxmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3, International Journal of Materials Science and Applications. Vol. 3, No. 3, 2014, pp. 111-115. doi: 10.11648/j.ijmsa.20140303.17.

[4] N Safarov, G Axmedov, S Axmedov. Investigations of Mathematical Models in SolarCollectors. American Journal of Energy Engineering. 2 (3), 75-79. 2014.

[5] AA Bayramov, AM Hashimov, NA Safarov, GM Akhmedov. Thermophotovoltaic Solar Energy Converters on the Basis AVBVI. 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. Volume 1. 2006/5, pp.651-654.

[6] J. Pankove, P. Algrain. Optical absorption of arsenic – doped degenerate germanium. Phys. Rev.126, 1962, 956.

[7] A.A.Rogachev. Reducing the semiconductor bandgap with strong doping, FTT, 9, 1967, 369.

[8] Tatarinova L. The structure of amorphous solid and liquid substances. (Moscow: Nauka, 1983, 151p.)

[9] Nabitovich I., StechievYa, VolosukYa. Defining a coherent intensity and the background intensity on the experimental curve of electron scattering. Crystallography, (1967), v.12, no 4, pp.584-590.

[10] Lifei Yu, Dechun Li *, Shengzhi Zhao, Guiqiu Li and Kejian Yang. First Principles Study on Electronic Structure and Optical Properties of Ternary GaAs:Bi Alloy. Materials 2012, 5, 2486-2497; doi:10.3390/ma5122486.

[11] G. Axmedov. Phase formation in bite nanofilms and crystallization of Bi2Te3 (Se3) nanothickness amorphous film. Scientific Israel – technological advantages, Vol.14, 2012, No.4 p.85-94.

[12] G. Axmedov. Kinetic of phase transformations of Bi2Se3 nano-thickness films. Scientific Israel – technological advantages, Vol.13, 2011, No.4 s.57-62.

[13] G. K. Chadha. Semimetal-semiconductor transition in Bi-In system. Indian Journal of Pure & Applied Physics. Vol.40, June 2002, pp. 407-416.

[14] Boqolyubov N. Problems of dynamical theory in statistical physics. Moscow: Gostekhizdat, , 1946, 359p.

[15] M. Saranya , C. Santhosh , S. Prathap Augustine & A. Nirmala Grace (2014) Synthesis and characterisation of CuS nanomaterials using hydrothermal route, Journal of Experimental Nanoscience, 9:4, 329-336, DOI: 10.1080/17458080.2012.661471.

[16] X A Fan, J Y Yang1, W Zhu, S Q Bao, X K Duan, C J Xiao, Q Q Zhang and Z Xie. Effect of nominal Sb2Te3 content on thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1−x alloys by MA–HP 2006 J. Phys. D: Appl. Phys. 39 5069.

[17] C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li and A. W. Holleitner. Local photocurrent generation in thin films of the topological insulator Bi2Se3Bi2Se3. Appl. Phys. Lett. 101, 251110 (2012);

[18] Gurban Akhmedov. Physical and Optical Properties of the Films Вi2Te3-Bi2Se3. Journal of Advances in Physics. Vol 11 No 2. 3017-3022 (2015).

[19] G Abdullaev, M Bakirov, N Safarov. Silicon solar cells with antireflection layers of silicon oxide and nitride. Applied solar energy, Volume 29. Issue 1. pages 76-78. 1993.

[20] Nuru Safarov. Polymer - Silicon Sensor for Determination Flow. Global Journal of Engineering Science and Research Management. 3(9): September 2016, pp.19-21.

[21] N. A. Safarov, F.N. Tatardar, S. S. Amirov. The hybride composites based new materials for the Electromechanical and acoustico-electrical converters.Journal of non-oxide glasses vol. 9, no 1, 2017, p. 19 – 23.

[22] Shimakawa, S. et al. Characterization of Cu(In,Ga)Se2 thin films by time-resolved photoluminescence. Phys. Status Solidi A, 203(11), 2630(2006).

[23] Evan B. Pollock and Robert J. Lad. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32, 041516 (2014).

[24] Ishu Sharma, Pawan Kumar, S.K. Tripathi. Physical and optical properties of bulk and thin films of a–Ge–Sb–Te lone-pair semiconductors. Phase Transitions. Volume 90, - Issue 7. Pages 653-671 (2017).

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